Download IPB021N06N3G Datasheet PDF
Inchange Semiconductor
IPB021N06N3G
FEATURES - With TO-263( D²PAK ) packaging - High speed switching - Low gate input resistance - Standard level gate drive - Easy to use - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Power supply - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -5~175 UNIT V V A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER UNIT Rth(j-c) Channel-to-case thermal resistance ℃/W...