Datasheet Details
| Part number | IPB034N03L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 239.01 KB |
| Description | N-Channel MOSFET |
| Download | IPB034N03L Download (PDF) |
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| Part number | IPB034N03L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 239.01 KB |
| Description | N-Channel MOSFET |
| Download | IPB034N03L Download (PDF) |
|
|
|
·Drain Current :ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 80 A ID(puls) Pulse Drain Current 400 A Ptot Total Dissipation 94 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.6 ℃/W IPB034N03L .
isc N-Channel MOSFET Transistor ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPB034N03L | Power-Transistor | Infineon |
 |
IPB034N03LG | OptiMOS3 Power-Transistor | Infineon Technologies AG |
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