IPB049N08N5
FEATURES
- With TO-263(D2PAK) packaging
- Ultra-fast body diode
- High speed switching
- Very low on-resistence
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operationz
- APPLICATIONS
- Switching applications
INCHANGE Semiconductor
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal...
