Download IPB065N03L Datasheet PDF
Inchange Semiconductor
IPB065N03L
DESCRIPTION - Drain Current :ID= 50A@ TC=25℃ - Drain Source Voltage : VDSS= 30V(Min) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±20 Drain Current-continuous ID(puls) Pulse Drain Current Ptot Total Dissipation Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature Range -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7...