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IPB080N03L - N-Channel MOSFET

General Description

Drain Current :ID= 50A@ TC=25℃ Drain Source Voltage : VDSS= 30V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current, high speed switching, switch mode power supplies.

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 50 A ID(puls) Pulse Drain Current 350 A Ptot Total Dissipation 47 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W IPB080N03L . isc website：www.