IPB090N06N3 N-Channel MOSFET

INCHANGE

IPB090N06N3 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB090N06N3 *.

IPB090N06N3 Features

* With TO-263(D2PAK) packaging
* Ultra-fast body diode
* High speed switching
* Very low on-resistance
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

IPB090N06N3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation 71 Tj Operating Junction Temperature -55~17

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Datasheet Details

Part number: IPB090N06N3
Manufacturer: INCHANGE
File Size: 200.62 KB
Datasheet: IPB090N06N3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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