IPB090N06N3 - N-Channel MOSFET

Features

With TO-263(D2PAK) packaging.
Ultra-fast body diode.
High speed switching.
Very low on-resistance.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

INCHANGE

Datasheet Details

Part number	IPB090N06N3
Manufacturer	INCHANGE
File Size	200.62 KB
Description	N-Channel MOSFET
Datasheet	IPB090N06N3 Datasheet
Additional preview pages of the IPB090N06N3 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB090N06N3 ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation 71 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resista

Published: Sep 3, 2020 |