Datasheet4U Logo Datasheet4U.com

IPD127N06L - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤12.7mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD127N06L Power-Transistor Infineon
IPD127N06LG Power-Transistor Infineon Technologies
IPD122N10N3 Power-Transistor Infineon
IPD122N10N3G Power-Transistor Infineon
IPD12CN10N Power-Transistor Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IPD122N10N3 N-Channel MOSFET
IPD110N12N3 N-Channel MOSFET
IPD135N03L N-Channel MOSFET
IPD135N08N3 N-Channel MOSFET
IPD16CN10N N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPD127N06L,IIPD127N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.7mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 75 UNIT ℃/W ℃/W isc website：www.iscsemi.