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IPD16CN10N - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤16mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 53 IDM Drain Current-Single Pulsed 212 PD Total Dissipation @TC=25℃ 100 Tj Max.