IPI35CN10N - N-Channel MOSFET

Inchange Semiconductor

Key Features

Static drain-source on-resistance: RDS(on) ≤0.035Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IPI35CN10N n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IPI35CN10N
Manufacturer	Inchange Semiconductor
File Size	257.06 KB
Description	N-Channel MOSFET
Datasheet	IPI35CN10N Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage 100 V ±20 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pulsed 108 A PD Total Dissipation @TC=25℃ 58 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.