IPI60R125CP - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPI60R125CP
Manufacturer	INCHANGE
File Size	282.11 KB
Description	N-Channel MOSFET
Datasheet	IPI60R125CP-INCHANGE.pdf

IPI60R125CP Product details

Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 82 PD Total Dissipation @TC=25℃ 208 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX

Features

Static drain-source on-resistance: RDS(on) ≤0.125Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 28, 2020 |