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IPP041N04N - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤4.1mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching for SMPS ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 94 Tj Max.