IPP50R299CP - N-Channel MOSFET

Features

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Static drain-source on-resistance: RDS(on) ≤0.299Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPP50R299CP
Manufacturer	INCHANGE
File Size	240.83 KB
Description	N-Channel MOSFET
Datasheet	IPP50R299CP Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP50R299CP，IIPP50R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.299Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 104 Tj Max.

Published: Oct 8, 2020 |