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IPP60R099C7 Datasheet

N-channel MOSFET

Manufacturer: Inchange Semiconductor

IPP60R099C7 Overview

·bines the benefits of a fast switching SJ MOSFET with excellent ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 83 PD Total Dissipation @TC=25℃ 110 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1.2mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R099C7 Key Features

  • Static drain-source on-resistance

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