IPP60R120C7 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPP60R120C7
Manufacturer	INCHANGE
File Size	240.90 KB
Description	N-Channel MOSFET
Datasheet	IPP60R120C7 Datasheet
Additional preview pages of the IPP60R120C7 datasheet.

Product details

Description

Combines the experience of the leading SJ MOSFET supplier with high class innovation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 19 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 92 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-c

Features

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Static drain-source on-resistance: RDS(on) ≤0.12Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |