IPP60R125C6 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPP60R125C6
Manufacturer	INCHANGE
File Size	270.87 KB
Description	N-Channel MOSFET
Datasheet	IPP60R125C6 Datasheet
Additional preview pages of the IPP60R125C6 datasheet.

Product details

Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Max.Operating Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient t

Features

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Static drain-source on-resistance: RDS(on) ≤0.125Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |