IPP65R190C7 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPP65R190C7
Manufacturer	INCHANGE
File Size	241.33 KB
Description	N-Channel MOSFET
Datasheet	IPP65R190C7 Datasheet
Additional preview pages of the IPP65R190C7 datasheet.

Product details

Description

Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃

Features

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Static drain-source on-resistance: RDS(on) ≤0.19Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |