IPP65R380E6 N-Channel MOSFET
•Static drain-source on-resistance:
RDS(on) ≤0.38Ω
•Enhancement mode
•Fast Switching Speed
•100% avalanche tested
•Minimum Lot-to-Lot variations for r.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
Image gallery
Download