IPP80CN10N N-Channel MOSFET

INCHANGE

IPP80CN10N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP80CN10N，IIPP80CN10N *.

IPP80CN10N Features

* Static drain-source on-resistance: RDS(on) ≤0.08Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP80CN10N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 31 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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IPP80CN10N Datasheet Preview — Preview of IPP80CN10N PDF

Datasheet Details

Part number: IPP80CN10N
Manufacturer: INCHANGE
File Size: 241.91 KB
Datasheet: IPP80CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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