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IPP90R500C3 Datasheet

N-channel MOSFET

Manufacturer: Inchange Semiconductor

IPP90R500C3 Overview

·High peak current capability ·Ultra low gate charge · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 156 Tj Max. ID =0.25mA 900 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.74mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP90R500C3 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -High peak current capability -Ultra low gate charge

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