Inchange Semiconductor IPW50R350CP
N-Channel MOSFET
| Part No. | IPW50R350CP |
|---|---|
| Datasheet | IPW50R350CP Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on)≤350mΩ●Enhancement mode:
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High Peak Current Capability
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 89 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.4 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R350CP IIPW50R350CP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 500 VGS(th) Gat...