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INCHANGE

IPW60R045CP Datasheet Preview

IPW60R045CP Datasheet

N-Channel MOSFET

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP
·FEATURES
·Static drain-source on-resistance:
RDS(on)45m
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
230
PD
Total Dissipation @TC=25
431
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
0.29
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IPW60R045CP Datasheet Preview

IPW60R045CP Datasheet

N-Channel MOSFET

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=3mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=44A
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=44A, VGS = 0V
MIN TYP MAX UNIT
600
V
2.5
3.5
V
45
mΩ
0.1
μA
10
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number IPW60R045CP
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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IPW60R045CP Datasheet PDF





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