IPW60R125C6
Overview
- Static drain-source on-resistance: RDS(on)≤125mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Fast switching
- Part: IPW60R125C6
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 238.45 KB