Datasheet4U Logo Datasheet4U.com

IPW60R170CFD7 - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤170mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IPW60R170CFD7

Datasheet Details

Part number IPW60R170CFD7
Manufacturer INCHANGE
File Size 237.88 KB
Description N-Channel MOSFET
Datasheet download datasheet IPW60R170CFD7 Datasheet
Additional preview pages of the IPW60R170CFD7 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R170CFD7 IIPW60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 14 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 75 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
Published: |