isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF2204，IIRF2204
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th)
Gate Threshold Voltage
VDS=10V; ID =250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=130A
IGSS
Gate-Source Leakage Current
VGS=±20V
IDSS
Drain-Source Leakage Current VDS=40V; VGS= 0V
VSD
Diode forward voltage
IS=130A, VGS = 0 V
MIN TYP MAX UNIT
40
V
2.0
4.0
V
3.6 mΩ
±0.2 μA
20
μA
1.3
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
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