Datasheet4U Logo Datasheet4U.com

IRF2204S - N-Channel MOSFET

Key Features

  • With TO-263( D2PAK ) packaging.
  • High speed switching.
  • Low gate input resistance.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF2204S Power MOSFET International Rectifier
IRF2204 AUTOMOTIVE MOSFET International Rectifier
IRF2204L Power MOSFET International Rectifier
IRF2204PBF Power MOSFET International Rectifier
IRF220 N-Channel Power MOSFET Samsung semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF2204 N-Channel MOSFET
IRF200B211 N-Channel MOSFET
IRF200P223 N-Channel MOSFET
IRF200S234 N-Channel MOSFET
IRF250P224 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF2204S ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 170 120 850 PD Total Dissipation 214 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Chann