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IRF250P225 N-Channel MOSFET

IRF250P225 Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225，IIRF250P225 *.

IRF250P225 Features

* Static drain-source on-resistance: RDS(on)≤22mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* OR-ring and redundant power switches
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA

IRF250P225 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRF250P225
Manufacturer
INCHANGE
File Size
237.76 KB
Datasheet
IRF250P225-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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