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INCHANGE

IRF250P225 Datasheet Preview

IRF250P225 Datasheet

N-Channel MOSFET

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF250P225IIRF250P225
·FEATURES
·Static drain-source on-resistance:
RDS(on)22m
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·OR-ring and redundant power switches
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
69
IDM
Drain Current-Single Pulsed
276
PD
Total Dissipation @TC=25
313
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
0.48
40
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRF250P225 Datasheet Preview

IRF250P225 Datasheet

N-Channel MOSFET

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF250P225IIRF250P225
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=270μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=41A
IGSS
Gate-Source Leakage Current
VGS= 20V
IDSS
Drain-Source Leakage Current
VDS=200V; VGS= 0V
VSD
Diode forward voltage
IS=41A, VGS = 0V
MIN TYP MAX UNIT
250
V
2.0
4.0
V
22
mΩ
0.1
μA
1.0
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRF250P225
Description N-Channel MOSFET
Maker INCHANGE
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