Datasheet4U Logo Datasheet4U.com

IRF2804 N-Channel MOSFET

IRF2804 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2804,IIRF2804 *.

IRF2804 Features

* Static drain-source on-resistance: RDS(on) ≤2.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF2804 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 1080 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage T

📥 Download Datasheet

Preview of IRF2804 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF2804
Manufacturer
INCHANGE
File Size
241.92 KB
Datasheet
IRF2804-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF2804L - HEXFET Power MOSFET (International Rectifier)
  • IRF2804LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804PbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804S - HEXFET Power MOSFET (International Rectifier)
  • IRF2804S-7P - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2804S-7PPbF - Power MOSFET (International Rectifier)
  • IRF2804SPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2805L - AUTOMOTIVE MOSFET (International Rectifier)

📌 All Tags

INCHANGE IRF2804-like datasheet