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IRF5210 - P-Channel MOSFET

Datasheet Summary

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source

Features

  • Static drain-source on-resistance: RDS(on)≤0.06Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRF5210

Datasheet Details

Part number IRF5210
Manufacturer INCHANGE
File Size 274.86 KB
Description P-Channel MOSFET
Datasheet download datasheet IRF5210 Datasheet
Additional preview pages of the IRF5210 datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max.
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