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IRF5210 P-Channel MOSFET

IRF5210 Description

isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 *.
Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use i.

IRF5210 Features

* Static drain-source on-resistance: RDS(on)≤0.06Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF5210 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Stora

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Datasheet Details

Part number
IRF5210
Manufacturer
INCHANGE
File Size
274.86 KB
Datasheet
IRF5210-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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