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IRF5210SPBF - P-Channel MOSFET

Features

  • P-channel.
  • With TO-263(D2PAK) packaging.
  • Uninterruptible power supply.
  • High speed switching.
  • Ultra low on-resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor ·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz INCHANGE Semiconductor IRF5210SPBF ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 -38 -24 -140 PD Total Dissipation 170 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-
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