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IRF60B217 Datasheet Preview

IRF60B217 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF60B217IIRF60B217
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤9.0m
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
225
PD
Total Dissipation @TC=25
83
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
1.8
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRF60B217 Datasheet Preview

IRF60B217 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF60B217IIRF60B217
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID = 50μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=36A
IGSS
Gate-Source Leakage Current
VGS=±20V
IDSS
Drain-Source Leakage Current VDS=40V; VGS= 0V
VSD
Diode forward voltage
IS =36A, VGS = 0 V
MIN TYP MAX UNIT
60
V
2.1
3.7
V
9.0 mΩ
±0.1 μA
1.0
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRF60B217
Description N-Channel MOSFET
Maker INCHANGE
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