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IRF6218 - P-Channel MOSFET

General Description

Reset switch for active clamp Reset DC-DC converters Low gate to drain charge to reduce switching losses ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -27 IDM Drain Current-

Key Features

  • Static drain-source on-resistance: RDS(on)≤0.15Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel MOSFET Transistor IRF6218,IIRF6218 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.15Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Reset switch for active clamp Reset DC-DC converters ·Low gate to drain charge to reduce switching losses ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -27 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 250 Tj Max.