IRF6218 Datasheet | Inchange Semiconductor

EATURES - Static drain-source on-resistance: RDS(on)≤0.15Ω - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRIPTION - Reset switch for active clamp Reset DC-DC converters - Low gate to drain charge to reduce switching losses - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -150 Gate-Source Voltage ±20 Drain Current-Continuous -27 Drain Current-Single Pulsed -110 Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.61 62 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...