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INCHANGE

IRF730A Datasheet Preview

IRF730A Datasheet

N-Channel MOSFET

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isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF730A
FEATURES
·Drain Current –ID=5.5A@ TC=25
·Drain Source Voltage-
: VDSS= 400V(Min)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switch Mode Power Supply
·Uninterruptable Power Supply
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous@ TC=25
5.5
ID
A
Drain Current-continuous@ TC=100
3.5
IDM
Drain Current-Single Plused
22
A
PD
Total Dissipation @TC=25
74
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.7
/W
Rth j-a Thermal Resistance,Junction to Ambient
62
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

IRF730A Datasheet Preview

IRF730A Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF730A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 3.3A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS=0
VSD
Forward On-Voltage
IS= 5.5A; VGS=0
Gfs
Forward Transconductance
VDS= 50VID=3.3A
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
VDD=200V;
ID=3.5A;
RG=12Ω
tf
Fall Time
MIN TYP MAX UNIT
400
V
2
4.5
V
1.0
Ω
±100 nA
25
uA
1.6
V
3.1
S
10
22
ns
20
16
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number IRF730A
Description N-Channel MOSFET
Maker INCHANGE
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IRF730A Datasheet PDF






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