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IRF730A - N-Channel MOSFET

Features

  • Drain Current.
  • ID=5.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 400V(Min).
  • Fast Switching Speed.
  • Low Drive Requirement.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF730A FEATURES ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch Mode Power Supply ·Uninterruptable Power Supply ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous@ TC=25℃ 5.5 ID A Drain Current-continuous@ TC=100℃ 3.5 IDM Drain Current-Single Plused 22 A PD Total Dissipation @TC=25℃ 74 W Tj Max.
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