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IRF8010 - N-Channel MOSFET

IRF8010 Description

isc N-Channel MOSFET Transistor *.

IRF8010 Features

* Static drain-source on-resistance: RDS(on) ≤15mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF8010 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 260 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRF8010
Manufacturer
INCHANGE
File Size
240.97 KB
Datasheet
IRF8010-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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