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IRF9540NL - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF9540NL VALUE -100 ±20 -23 140 -55~175 -55~175 UNIT V V A W ℃ ℃ MAX 1.1 UNIT ℃/W isc website：www.iscsemi.
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