IRFB260N Datasheet (PDF) Download
Inchange Semiconductor
IRFB260N

Key Features

  • Static drain-source on-resistance: RDS(on) ≤40mΩ
  • Enhancement mode
  • Fast Switching Speed
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Fully Characterized Avalanche Voltage and Current