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IRFB260N N-Channel MOSFET

IRFB260N Description

isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N *.

IRFB260N Features

* Static drain-source on-resistance: RDS(on) ≤40mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fully Characterized Avalanche Voltage and Current
* ABSOL

IRFB260N Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRFB260N
Manufacturer
INCHANGE
File Size
241.11 KB
Datasheet
IRFB260N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFB260N-like datasheet