Datasheet4U Logo Datasheet4U.com

IRFB3607 - TO-262 N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤9.0mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB3607GPBF Power MOSFET International Rectifier
IRFB3607PBF Power MOSFET International Rectifier
IRFB3004GPbF Power MOSFET International Rectifier
IRFB3004PBF Power MOSFET International Rectifier
IRFB3006GPBF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFB3607 TO-220 N-Channel MOSFET
IRFB3004 N-Channel MOSFET
IRFB3006 N-Channel MOSFET
IRFB3077 N-Channel MOSFET
IRFB31N20D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 140 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.