Download IRFB3607 Datasheet PDF
Inchange Semiconductor
IRFB3607
FEATURES - Static drain-source on-resistance: RDS(on) ≤9.0mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - reliable device for use in a wide variety of applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL...