IRFB3806 - N-Channel MOSFET

Features

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Static drain-source on-resistance: RDS(on) ≤15.8mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRFB3806 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IRFB3806

Datasheet Details

Part number	IRFB3806
Manufacturer	Inchange Semiconductor
File Size	241.65 KB
Description	N-Channel MOSFET
Datasheet	IRFB3806 Datasheet
Additional preview pages of the IRFB3806 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFB3806，IIRFB3806 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for High speed power switching and high efficiency synchronous rectification in SMPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 170 PD Total Dissipation @TC=25℃ 71 Tj Max.

Published: Oct 12, 2020 |