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IRFB4229 - N-Channel MOSFET

IRFB4229 Description

isc N-Channel MOSFET Transistor IRFB4229，IIRFB4229 *.

IRFB4229 Features

* Static drain-source on-resistance: RDS(on) ≤46mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* 175℃ operating junction temperature and high repetitive peak

IRFB4229 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRFB4229
Manufacturer
INCHANGE
File Size
240.87 KB
Datasheet
IRFB4229-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFB4229-like datasheet