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isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRFB4310ZPBF
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous
Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
127 90
560
PD
Total Dissipation
250
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient therm
IRFB4310ZPBF Datasheet
