Full PDF Text Transcription for IRFB4510 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFB4510. For precise diagrams, and layout, please refer to the original PDF.
(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 62 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 140 Tj Max.
IRFB4510 Datasheet
