IRFB5615 - N-Channel MOSFET

Features

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Static drain-source on-resistance: RDS(on) ≤39mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRFB5615
Manufacturer	Inchange Semiconductor
File Size	240.70 KB
Description	N-Channel MOSFET
Datasheet	IRFB5615 Datasheet
Additional preview pages of the IRFB5615 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFB5615，IIRFB5615 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤39mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 144 Tj Max.

Published: Oct 12, 2020 |