IRFB7787 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤8.4mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRFB7787
Manufacturer	INCHANGE
File Size	241.61 KB
Description	N-Channel MOSFET
Datasheet	IRFB7787 Datasheet
Additional preview pages of the IRFB7787 datasheet.

📁 Similar Datasheet

IRFB7787PbF - Power MOSFET (International Rectifier)
IRFB7730 - Power MOSFET (International Rectifier)
IRFB7730PbF - Power MOSFET (International Rectifier)
IRFB7734PbF - Power MOSFET (International Rectifier)
IRFB7740PBF - Power MOSFET (International Rectifier)
IRFB7746PBF - Power MOSFET (International Rectifier)
IRFB7430PBF - Power MOSFET (International Rectifier)
IRFB7434PBF - Power MOSFET (International Rectifier)
IRFB7434PBF - N-Channel 40V MOSFET (VBsemi)
IRFB7437 - Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRFB7730 - N-Channel MOSFET
IRFB7734 - N-Channel MOSFET
IRFB7740 - N-Channel MOSFET
IRFB7746 - N-Channel MOSFET
IRFB7434 - N-Channel MOSFET
IRFB7437 - N-Channel MOSFET
IRFB7440 - N-Channel MOSFET
IRFB7446 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor IRFB7787,IIRFB7787 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 76 IDM Drain Current-Single Pulsed 280 PD Total Dissipation @TC=25℃ 125 Tj Max.

Published: Oct 12, 2020 |