IRFB812 Datasheet Text
isc N-Channel MOSFET Transistor
IRFB812，IIRFB812
- Features
- Static drain-source on-resistance:
RDS(on) ≤ 2.2Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Uninterruptible power supplies
- Motor control applications
-...
