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isc N-Channel MOSFET Transistor
IRFB812，IIRFB812
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Uninterruptible power supplies ·Motor control applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
3.6
IDM
Drain Current-Single Pulsed
14.4
PD
Total Dissipation @TC=25℃
78
Tj
Max.
IRFB812 Datasheet
