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INCHANGE

IRFIB41N15D Datasheet Preview

IRFIB41N15D Datasheet

N-Channel MOSFET

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Isc N-Channel MOSFET Transistor
·FEATURES
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
IRFIB41N15D
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25
(VGS at 10V)
Tc=100
Drain Current-Single Pulsed
±30
41
29
164
PD
Total Dissipation @TC=25
48
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
3.14
65
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRFIB41N15D Datasheet Preview

IRFIB41N15D Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFIB41N15D
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
150
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=0.25mA
3.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=25A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
Drain-Source Leakage Current
VDS= 150V; VGS= 0V;Tj=25
VDS= 120V; VGS= 0V; Tj=150
Diode forward voltage
ISD=25A,VGS = 0 V
V
5.5
V
45
mΩ
±0.1 μA
25
250
μA
1.3
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number IRFIB41N15D
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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