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IRFP4229 - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on)≤46mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤46mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 310 Tj Max.