IRFP4229 Datasheet (PDF) Download
Inchange Semiconductor
IRFP4229

Key Features

  • Static drain-source on-resistance: RDS(on)≤46mΩ
  • Enhancement mode
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short fall & Rise Times For Fast Switching