IRFP4332 - N-Channel MOSFET

Datasheet Summary

Features

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Static drain-source on-resistance: RDS(on)≤33mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IRFP4332
Manufacturer	INCHANGE
File Size	238.43 KB
Description	N-Channel MOSFET
Datasheet	IRFP4332 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 57 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 360 Tj Max.

Published: Oct 3, 2020 |