Download IRFP4468 Datasheet PDF
IRFP4468 page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468,IIRFP4468 - Features - Static drain-source on-resistance: RDS(on)≤2.6mΩ - Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - High Efficiency Synchronous Rectification in SMPS - Uninterruptible Power Supply - High Speed Power Switching - Hard Switched And High Frequency Circuits -...