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IRFP450 Datasheet Preview

IRFP450 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP450
FEATURES
·Drain Current –ID= 14A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
500
V
±20
V
14
A
56
A
180
W
-55~150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.7
30
UNIT
/W
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

IRFP450 Datasheet Preview

IRFP450 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP450
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS
Drain-Source Breakdown
Voltage
VGS(th)
Gate Threshold Voltage
CONDITIONS
VGS= 0; ID= 0.25mA
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 8.4A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS= 500V; VGS= 0
VSD
Forward On-Voltage
trr
Reverse Recovery Time
gfs
Forward Transconductance
IS= 14A; VGS= 0
IS=18A;VGS= 0V;
dIF/dt=100A/μs
VDS= 10V;ID= 8.4A
MIN TYPE MAX UNIT
500
V
2
4
V
0.4
Ω
±100 nA
250 μA
1.4
V
583
ns
9.3
S
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number IRFP450
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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IRFP450 Datasheet PDF





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