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IRFP4768 - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on)≤17.5mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 93 IDM Drain Current-Single Pulsed 370 PD Total Dissipation @TC=25℃ 520 Tj Max.