Datasheet4U Logo Datasheet4U.com

IRFP7530 - N-Channel MOSFET

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤2mΩ.
  • Enhancement mode: Vth =2.1 to 3.7V (VDS=VGS, ID=250μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFP7530

Datasheet Details

Part number IRFP7530
Manufacturer INCHANGE
File Size 237.68 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFP7530 Datasheet
Additional preview pages of the IRFP7530 datasheet.

📁 Similar Datasheet

  • IRFP7530PBF - Power MOSFET (International Rectifier)
  • IRFP7537PBF - Power MOSFET (International Rectifier)
  • IRFP7430PBF - Power MOSFET (International Rectifier)
  • IRFP7718PBF - Power MOSFET (International Rectifier)
  • IRFP040 - N-Channel Power MOSFET (International Rectifier)
  • IRFP042 - N-Channel Power MOSFET (International Rectifier)
  • IRFP044 - Power MOSFET (Power MOSFET)
  • IRFP044 - Power MOSFET (Vishay)
  • IRFP044N - Power MOSFET (Power MOSFET)
  • IRFP044NPbF - Power MOSFET (International Rectifier)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRFP7530，IIRFP7530 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2mΩ ·Enhancement mode: Vth =2.1 to 3.7V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 760 PD Total Dissipation @TC=25℃ 341 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.
Published: |